[Introduction]After years of research and development, Risen semiconductor Technology Co., Ltd. has launched silicon carbide MOS and SBD series products, which have been recognized by the market and customers, and are widely used in high-end server power supplies, solar inverters, UPS power supplies, motor drives, energy storage, charging piles and other fields.

Silicon carbide MOS chips have excellent high-frequency characteristics. In high-frequency applications, the traditional TO-247 package will restrict its high-frequency characteristics. In response to customer needs and to further improve the performance of SiC MOS, Risen Semiconductor has developed a four-pin TO-247 package (TO-247-4L) SiC MOS product.

1. Difference between TO-247 four-pin package and three-pin package

Compared with the three-pin package TO-247, the four-pin package TO-247 has one more pin, and the added pin is the driver source pin. The pin arrangement is changed from GDS in TO-247 three-pin package to DS(P)-S(D)-G, in which the second pin S(P) is connected to the load terminal, and the three-pin S(D) is connected to the driver terminal .

For the traditional three-pin TO-247 package. The back electromotive force VLS (=LS*dID/dt) is generated by the inductance component L of the source power supply line and the drain current slope dI dID/dt, and the voltage VGS is applied to the gate and source drain of the chip. This back EMF will reduce the actual applied voltage from the set gate voltage, and the switching speed, especially the turn-on speed, will be slowed down.

By adding a signal source terminal for gate drive, the current in the power supply line and the current in the gate drive line can be separated to reduce the effect of gate-source voltage inductance. The TO-247-4L in the four-pin package directly connects the source end of the drive side to the position of the chip, and is separated from the source line of the load side, so that it is not easily affected by the drive voltage. Thus, the high-speed switching performance of the silicon carbide MOS is improved.

2. Four-pin package (TO-247-4L) advantage

The TO-247-4L silicon carbide MOS in a four-pin package can give full play to the high-speed switching performance of the silicon carbide MOS itself. Compared with the traditional three-pin package TO-247, the switching loss can be reduced by about 30-35%, which can further reduce the loss of the circuit.

Turn-on loss: ID rise at turn-on for TO-247-4L packaged product with driver source pin (red dashed line) compared to TO-247 packaged product without driver source pin (light blue dashed line) faster. By comparison, it can be seen that the switching loss of the TO-247 package product (light blue line) is 2700J, while the TO-247-4L package product (red line) is 1700J, and the switching loss is reduced by about 35%, a significant reduction.

Turn-off loss: It can be seen from the waveform at turn-off that the switching loss of the TO-247 package product (light blue solid line) is 2100J, and the TO-247-4L package product (red solid line) is 1450J, and the switching loss is reduced by about 30%.

3. Risen Semiconductor Silicon Carbide MOS Series Products

After years of research and development, Risen Semiconductor now has a complete series of silicon carbide MOS products. Each type of product has both TO-247-3L and TO-247-4L packages, providing customers with more choices.

Risen Semiconductor has been committed to industry-leading product development. In the future, we will continue to promote the development of innovative components, and provide solutions including silicon carbide products to further reduce the power consumption of various devices.