The INN40W08 HEMT has been developed using the company’s InnoGaN technology which features ultra-low on resistance.
“ Innoscience now makes it possible to introduce GaN HEMTs into mobile phone handsets” says Innoscience’s Dr Denis Marcon.
Featuring a bi-directional blocking capability, the new INN40W08 GaN HEMTs have a ultra-low on resistance of just 7.8 mΩ.
This is achieved by the company’s InnoGaN patented strain enhancement layer technology which reduces sheet resistance by 66%.
Gate charge (QG) is typically 12.7nC. The 5×5 grid wafer level chip scale package (WLCSP) measures 2×2 mm.
This footprint enables INN40W08 GaN HEMTs to be integrated inside mobile phones.
Applications include high side load switching, over-voltage protection in a smart phone’s USB port and multiple power supplies including chargers and adapters.
This saves on the overall OVP costs and makes the OVP unit smaller, which is very important considering the space constraints on a mobile phone’s circuit board.
Innoscience has two fabs including a dedicated 8-inch GaN-on-Si site.
Currently the company has a capacity of 10,000 8-inch wafers per month which will ramp up to 14,000 8-inch wafers per month later this year and 70,000 8-inch wafers per month by 2025.
The company has a portfolio of 30 – 150V and 650V e-mode GaN-on-Si transistors.