Innoscience opens new locations in the USA and Europe
Innoscience Technology, a developer of high performance, low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions, has unveiled new international operations in the USA and Europe.
Founded in 2015 and headquartered in Suzhou, China, Innoscience will now be able to support customers through the addition of design and sales support facilities in Santa Clara, California, and Leuven, Belgium.
Innoscience has established itself as the world’s largest Integrated Device Manufacture (IDM) that is fully focused on GaN technology and it has two wafer fabs including the world’s largest dedicated 8-inch GaN-on-Si site.
Currently the company has a capacity of 10,000 8-inch wafers per month which will ramp up to 14,000 8-inch wafers per month later this year and 70,000 8-inch wafers per month by 2025. The company has developed a wide portfolio of devices from 30V to 650V and has shipped more than 35 million parts for use in applications including USB PD chargers/adapters, data centres, mobile phones and LED drivers.
Innoscience produces high-performance, normally-off e-mode GaN FETs. By introducing a stress enhancement layer, the company has been able to significantly reduce RDS(on) without affecting other parameters including threshold voltage and leakage. Both epitaxy as well as device processing have been optimized to obtain high reproducibility and yield. Parts have passed quality and reliability tests in excess of JEDEC standards.
Commenting Dr. Denis Marcon, General Manager, Innoscience Europe said, “The time is right for GaN, and Innoscience is ready to supply the world. Our huge manufacturing capacity means that our customers are assured of security of supply, which is often uppermost in people’s minds given the shortage of chips at the moment and we look forward to working with any company in order to proliferate GaN throughout the global electronics industry.”